BC850B
BC850B
ПроизводительShikues
Партномер производителяBC850B
Количество на складе1 шт (1 склад)
ОписаниеTransistors/Thyristors Shikues BC850B
DatasheetDatasheet
1 шт.
Ti-storeХарактеристики
| Параметр | Значение |
|---|---|
| Категория | Биполярные (BJT) |
| Производитель | Shikues |
| Вес | 0.035 |
| Operating Temperature | -65℃~+150℃ |
| Type | NPN |
| Power Dissipation (Pd) | 250mW |
| Transistor Type | NPN |
| DC Current Gain (hFE@Ic,Vce) | 240@10uA,5V |
| Collector Current (Ic) | 100mA |
| Collector-Emitter Breakdown Voltage (Vceo) | 35V |
| Transition frequency (fT) | 100MHz |
| Collector-emitter saturation voltage (VCE(sat)@Ic,Ib) | 90mV@10mA,0.5mA |
| Collector-emitter voltage (Vceo) | 35V |
| Collector Cut-Off Current (Icbo) | 15nA |
| Pd- Power Dissipation | 250mW |
| Current - Collector(Ic) | 100mA |
| Emitter-Base Voltage(Vebo) | 5V |
| Current - Collector Cutoff | 15nA |
| Transition frequency(fT) | 100MHz |