CSD18510Q5B
CSD18510Q5B
ПроизводительTexas Instruments
Партномер производителяCSD18510Q5B
Количество на складе150 шт (1 склад)
ОписаниеTransistors/Thyristors Texas Instruments CSD18510Q5B
DatasheetDatasheet
150 шт.
Ti-storeХарактеристики
| Параметр | Значение |
|---|---|
| Категория | МОП-транзисторы |
| Производитель | Texas Instruments |
| Вес | 0.132 |
| Operating Temperature | -55℃~+150℃@(Tj) |
| Type | 1 N-Channel |
| Continuous Drain Current (Id) | 300A |
| Input Capacitance (Ciss@Vds) | 11.4nF@20V |
| Drain Source Voltage (Vdss) | 40V |
| Power Dissipation (Pd) | 156W |
| Gate Threshold Voltage (Vgs(th)@Id) | 2.3V@250uA |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 0.96mΩ@32A,10V |
| Total Gate Charge (Qg@Vgs) | 153nC@10V |
| Pd- Power Dissipation | 156W |
| RDS(on) | 0.96mΩ@10V,32A |
| Drain to Source Voltage | 40V |
| Number | One N-channel |
| Operating Junction Temperature Range | -55℃~+150℃@(Tj) |
| Current - Continuous Drain(Id) | 300A |
| Gate Threshold Voltage (Vgs(th)) | 2.3V |
| Input Capacitance(Ciss) | 11.4nF@20V |
| Gate Charge(Qg) | 153nC@10V |