DTC114EM3T5G
DTC114EM3T5G
Производительonsemi
Партномер производителяDTC114EM3T5G
Количество на складе90 шт (1 склад)
ОписаниеTransistors/Thyristors onsemi DTC114EM3T5G
DatasheetDatasheet
90 шт.
Ti-storeХарактеристики
| Параметр | Значение |
|---|---|
| Категория | Цифровые транзисторы |
| Производитель | onsemi |
| Вес | 0.011 |
| Operating Temperature | -55℃~+150℃ |
| Power Dissipation (Pd) | 260mW |
| Input Voltage (VI(on)@Ic,Vce) | 2.5V@10mA,0.3V |
| Transistor Type | - |
| Resistor Ratio | 1.2 |
| Output Voltage (VO(on)@Io/Ii) | 200mV |
| DC Current Gain (hFE@Ic,Vce) | 35@10mA,10V |
| Collector Current (Ic) | 100mA |
| Collector-Emitter Breakdown Voltage (Vceo) | 50V |
| Input Resistor | 13kΩ |
| Input Voltage (VI(off)@Ic,Vce) | 1.2V@100uA,5V |
| Collector-emitter voltage (Vceo) | 50V |
| Pd- Power Dissipation | 260mW |
| Current - Collector(Ic) | 100mA |
| Number | - |
| DC Current Gain | 35@10mA,10V |
| Voltage - Input(Max)(VI(off)) | 800mV@100uA,5.0V |
| Output Voltage(VO(on)) | 200mV |