IPD180N10N3GATMA1
IPD180N10N3GATMA1
ПроизводительInfineon Technologies
Партномер производителяIPD180N10N3GATMA1
Количество на складе70 шт (1 склад)
ОписаниеTransistors/Thyristors Infineon Technologies IPD180N10N3GATMA1
DatasheetDatasheet
70 шт.
Ti-storeХарактеристики
| Параметр | Значение |
|---|---|
| Категория | МОП-транзисторы |
| Производитель | Infineon Technologies |
| Вес | 0.491 |
| Operating Temperature | -55℃~+175℃ |
| Type | N-Channel |
| Continuous Drain Current (Id) | 43A |
| Input Capacitance (Ciss@Vds) | 1.8nF |
| Drain Source Voltage (Vdss) | 100V |
| Power Dissipation (Pd) | 71W |
| Gate Threshold Voltage (Vgs(th)@Id) | 3.5V@33uA |
| Reverse Transfer Capacitance (Crss@Vds) | 11pF |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 18mΩ@10V,33A |
| Total Gate Charge (Qg@Vgs) | 25nC@10V |
| Pd- Power Dissipation | 71W |
| RDS(on) | 18mΩ@10V |
| Drain to Source Voltage | 100V |
| Number | One N-channel |
| Operating Junction Temperature Range | -55℃~+175℃ |
| Current - Continuous Drain(Id) | 43A |
| Gate Threshold Voltage (Vgs(th)) | 3.5V@33uA |
| Input Capacitance(Ciss) | 1.8nF |
| Output Capacitance(Coss) | 315pF |
| Gate Charge(Qg) | 25nC@10V |