IRF9310TRPBF
IRF9310TRPBF
ПроизводительInfineon Technologies
Партномер производителяIRF9310TRPBF
Количество на складе0 шт (0 складов)
ОписаниеTransistors/Thyristors Infineon Technologies IRF9310TRPBF
DatasheetDatasheet
Характеристики
| Параметр | Значение |
|---|---|
| Категория | МОП-транзисторы |
| Производитель | Infineon Technologies |
| Вес | 0.275 |
| Operating Temperature | -55℃~+150℃@(Tj) |
| Type | 1 Piece P-Channel |
| Continuous Drain Current (Id) | 20A |
| Input Capacitance (Ciss@Vds) | 5.25nF@15V |
| Drain Source Voltage (Vdss) | 30V |
| Power Dissipation (Pd) | 2.5W |
| Gate Threshold Voltage (Vgs(th)@Id) | 2.4V@100uA |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 4.6mΩ@10V,20A |
| Total Gate Charge (Qg@Vgs) | 165nC@10V |
| Pd- Power Dissipation | 2.5W |
| RDS(on) | 4.6mΩ@10V,20A |
| Drain to Source Voltage | 30V |
| Number | 1 P-Channel |
| Operating Junction Temperature Range | -55℃~+150℃@(Tj) |
| Current - Continuous Drain(Id) | 20A |
| Gate Threshold Voltage (Vgs(th)) | 2.4V |
| Input Capacitance(Ciss) | 5.25nF@15V |
| Gate Charge(Qg) | 165nC@10V |