MJD350-13
MJD350-13
ПроизводительDiodes Incorporated
Партномер производителяMJD350-13
Количество на складе560 шт (1 склад)
ОписаниеTransistors/Thyristors Diodes Incorporated MJD350-13
DatasheetDatasheet
560 шт.
Ti-storeХарактеристики
| Параметр | Значение |
|---|---|
| Категория | Биполярные (BJT) |
| Производитель | Diodes Incorporated |
| Вес | 0.356 |
| Operating Temperature | -55℃~+150℃ |
| Type | PNP |
| Power Dissipation (Pd) | 1.56W |
| Transistor Type | PNP |
| DC Current Gain (hFE@Ic,Vce) | 30@50mA,10V |
| Collector Current (Ic) | 500mA |
| Collector-Emitter Breakdown Voltage (Vceo) | 300V |
| Transition frequency (fT) | 10MHz |
| Collector-emitter saturation voltage (VCE(sat)@Ic,Ib) | 0.5V@100mA,10mA |
| Collector-emitter voltage (Vceo) | 300V |
| Collector Cut-Off Current (Icbo) | 100nA |
| Pd- Power Dissipation | 1.56W |
| Current - Collector(Ic) | 500mA |
| Emitter-Base Voltage(Vebo) | 7V |
| Current - Collector Cutoff | 100nA |
| Transition frequency(fT) | 10MHz |