PUMD9,115
PUMD9,115
ПроизводительNexperia
Партномер производителяPUMD9,115
Количество на складе0 шт (0 складов)
ОписаниеTransistors/Thyristors Nexperia PUMD9,115
DatasheetDatasheet
Характеристики
| Параметр | Значение |
|---|---|
| Категория | Цифровые транзисторы |
| Производитель | Nexperia |
| Вес | 0.039 |
| Operating Temperature | -65℃~+150℃ |
| Power Dissipation (Pd) | 300mW |
| Input Voltage (VI(on)@Ic,Vce) | 1.4V |
| Transistor Type | - |
| Resistor Ratio | 4.7 |
| DC Current Gain (hFE@Ic,Vce) | 100@5mA,5V |
| Collector Current (Ic) | 100mA |
| Collector-Emitter Breakdown Voltage (Vceo) | 50V |
| Input Resistor | 10kΩ |
| Input Voltage (VI(off)@Ic,Vce) | 700mV@100uA,5V |
| Collector-emitter voltage (Vceo) | 50V |
| Pd- Power Dissipation | 300mW |
| Current - Collector(Ic) | 100mA |
| Number | - |
| DC Current Gain | 100@5mA,5V |
| Voltage - Input(Max)(VI(off)) | 700mV |
| Emitter-Base Voltage VEBO | 6V |