RQ6P015SPTR
RQ6P015SPTR
ПроизводительROHM Semicon
Партномер производителяRQ6P015SPTR
Количество на складе91 шт (1 склад)
ОписаниеTransistors/Thyristors ROHM Semicon RQ6P015SPTR
DatasheetDatasheet
91 шт.
Ti-storeХарактеристики
| Параметр | Значение |
|---|---|
| Категория | МОП-транзисторы |
| Производитель | ROHM Semicon |
| Вес | 0.033 |
| Operating Temperature | -55℃~+150℃ |
| Type | 1 Piece P-Channel |
| Continuous Drain Current (Id) | 1.5A |
| Input Capacitance (Ciss@Vds) | 950pF |
| Drain Source Voltage (Vdss) | 100V |
| Power Dissipation (Pd) | 1.25W |
| Gate Threshold Voltage (Vgs(th)@Id) | 1V@1mA |
| Reverse Transfer Capacitance (Crss@Vds) | 20pF |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 470mΩ@10V,1.5A |
| Total Gate Charge (Qg@Vgs) | 17nC@10V |
| Pd- Power Dissipation | 1.25W |
| RDS(on) | 470mΩ@10V,1.5A |
| Drain to Source Voltage | 100V |
| Number | 1 P-Channel |
| Operating Junction Temperature Range | -55℃~+150℃ |
| Current - Continuous Drain(Id) | 1.5A |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Input Capacitance(Ciss) | 950pF |
| Gate Charge(Qg) | 17nC@10V |