PM509BA
PM509BA
ПроизводительNIKO Semicon
Партномер производителяPM509BA
ОписаниеTransistors/Thyristors NIKO Semicon PM509BA
Характеристики
| Параметр | Значение |
|---|---|
| Категория | МОП-транзисторы |
| Производитель | NIKO Semicon |
| Вес | 0.043 |
| Operating Temperature | -55℃~+150℃ |
| Type | 1 Piece P-Channel |
| Continuous Drain Current (Id) | null |
| Input Capacitance (Ciss@Vds) | 190pF@15V |
| Drain Source Voltage (Vdss) | 30V |
| Power Dissipation (Pd) | 400mW |
| Gate Threshold Voltage (Vgs(th)@Id) | 1.7V@250uA |
| Reverse Transfer Capacitance (Crss@Vds) | 27pF@15V |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 120mΩ@10V,2A |
| Total Gate Charge (Qg@Vgs) | 4.8nC@10V |