P6002OAG
P6002OAG
ПроизводительNIKO Semicon
Партномер производителяP6002OAG
ОписаниеTransistors/Thyristors NIKO Semicon P6002OAG
Характеристики
| Параметр | Значение |
|---|---|
| Категория | МОП-транзисторы |
| Производитель | NIKO Semicon |
| Вес | 0.038 |
| Operating Temperature | -55℃~+150℃ |
| Type | 1 N-Channel + 1 P-Channel |
| Continuous Drain Current (Id) | 3.4A |
| Input Capacitance (Ciss@Vds) | 263pF@15V;415pF@15V |
| Drain Source Voltage (Vdss) | 20V |
| Power Dissipation (Pd) | 1.14W |
| Gate Threshold Voltage (Vgs(th)@Id) | 750mV@250uA |
| Reverse Transfer Capacitance (Crss@Vds) | 1.65pF@15V;1.1pF@15V |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 115mΩ@4.5V,2A |
| Total Gate Charge (Qg@Vgs) | 4nC@4.5V |