HYG210P06LQ1D
HYG210P06LQ1D
ПроизводительHUAYI
Партномер производителяHYG210P06LQ1D
ОписаниеTransistors/Thyristors HUAYI HYG210P06LQ1D
DatasheetDatasheet
Характеристики
| Параметр | Значение |
|---|---|
| Категория | МОП-транзисторы |
| Производитель | HUAYI |
| Вес | 0.529 |
| Operating Temperature | -55℃~+175℃ |
| Type | P-Channel |
| Continuous Drain Current (Id) | 40A |
| Input Capacitance (Ciss@Vds) | 3679pF |
| Drain Source Voltage (Vdss) | 60V |
| Power Dissipation (Pd) | 60W |
| Gate Threshold Voltage (Vgs(th)@Id) | 1V@250uA |
| Reverse Transfer Capacitance (Crss@Vds) | 60pF |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 19mΩ@10V |
| Total Gate Charge (Qg@Vgs) | 90nC@10V |
| Pd- Power Dissipation | 60W |
| RDS(on) | 32mΩ@4.5V |
| Drain to Source Voltage | 60V |
| Number | 1 P-Channel |
| Operating Junction Temperature Range | -55℃~+175℃ |
| Current - Continuous Drain(Id) | 40A |
| Gate Threshold Voltage (Vgs(th)) | 3V@250uA |
| Input Capacitance(Ciss) | 3.679nF |
| Output Capacitance(Coss) | 123pF |
| Gate Charge(Qg) | 90nC@10V |