HYG350P13NA1B
HYG350P13NA1B
ПроизводительHUAYI
Партномер производителяHYG350P13NA1B
ОписаниеTransistors/Thyristors HUAYI HYG350P13NA1B
Характеристики
| Параметр | Значение |
|---|---|
| Категория | МОП-транзисторы |
| Производитель | HUAYI |
| Вес | 1.68 |
| Operating Temperature | -55℃~+175℃ |
| Continuous Drain Current (Id) | 39A |
| Input Capacitance (Ciss@Vds) | 4118pF |
| Drain Source Voltage (Vdss) | 125V |
| Power Dissipation (Pd) | 120W |
| Gate Threshold Voltage (Vgs(th)@Id) | 1V@250uA |
| Reverse Transfer Capacitance (Crss@Vds) | 194.8pF |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 35mΩ@10V,20A |
| Total Gate Charge (Qg@Vgs) | 79.4nC |