HYG400P10LR1B
HYG400P10LR1B
ПроизводительHUAYI
Партномер производителяHYG400P10LR1B
ОписаниеTransistors/Thyristors HUAYI HYG400P10LR1B
Характеристики
| Параметр | Значение |
|---|---|
| Категория | МОП-транзисторы |
| Производитель | HUAYI |
| Вес | 1.65 |
| Operating Temperature | -55℃~+175℃ |
| Continuous Drain Current (Id) | 40A |
| Input Capacitance (Ciss@Vds) | 5402pF@25V |
| Drain Source Voltage (Vdss) | 100V |
| Power Dissipation (Pd) | 100W |
| Gate Threshold Voltage (Vgs(th)@Id) | 1.8V@250uA |
| Reverse Transfer Capacitance (Crss@Vds) | 121pF@25V |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 42mΩ@10V,20A |
| Total Gate Charge (Qg@Vgs) | 79nC@10V |