HYG420N06LR1D
HYG420N06LR1D
ПроизводительHUAYI
Партномер производителяHYG420N06LR1D
ОписаниеTransistors/Thyristors HUAYI HYG420N06LR1D
Характеристики
| Параметр | Значение |
|---|---|
| Категория | МОП-транзисторы |
| Производитель | HUAYI |
| Вес | 0.525 |
| Operating Temperature | -55℃~+175℃ |
| Type | - |
| Continuous Drain Current (Id) | 22A |
| Input Capacitance (Ciss@Vds) | 843pF@0V |
| Drain Source Voltage (Vdss) | null |
| Power Dissipation (Pd) | 37.5W |
| Gate Threshold Voltage (Vgs(th)@Id) | 1.8V@250uA |
| Reverse Transfer Capacitance (Crss@Vds) | 62pF |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 35mΩ@10V |
| Total Gate Charge (Qg@Vgs) | 16nC |