HYG800P10LR1D
HYG800P10LR1D
ПроизводительHUAYI
Партномер производителяHYG800P10LR1D
ОписаниеTransistors/Thyristors HUAYI HYG800P10LR1D
DatasheetDatasheet
Характеристики
| Параметр | Значение |
|---|---|
| Категория | МОП-транзисторы |
| Производитель | HUAYI |
| Вес | 0.42 |
| Operating Temperature | -55℃~+175℃ |
| Type | P-Channel |
| Continuous Drain Current (Id) | 20A |
| Input Capacitance (Ciss@Vds) | 3273pF |
| Drain Source Voltage (Vdss) | 100V |
| Power Dissipation (Pd) | 75W |
| Gate Threshold Voltage (Vgs(th)@Id) | 1V@250uA |
| Reverse Transfer Capacitance (Crss@Vds) | 67pF |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 77mΩ@10V |
| Total Gate Charge (Qg@Vgs) | 42.6nC@10V |
| Pd- Power Dissipation | 75W |
| RDS(on) | 110mΩ@4.5V |
| Drain to Source Voltage | 100V |
| Number | - |
| Operating Junction Temperature Range | -55℃~+175℃ |
| Current - Continuous Drain(Id) | 20A |
| Gate Threshold Voltage (Vgs(th)) | 3V@250uA |
| Input Capacitance(Ciss) | 3.273nF |
| Output Capacitance(Coss) | 111pF |
| Gate Charge(Qg) | 42.6nC@10V |