HYG800P10LR1S
HYG800P10LR1S
ПроизводительHUAYI
Партномер производителяHYG800P10LR1S
ОписаниеTransistors/Thyristors HUAYI HYG800P10LR1S
Характеристики
| Параметр | Значение |
|---|---|
| Категория | МОП-транзисторы |
| Производитель | HUAYI |
| Вес | 0.22 |
| Operating Temperature | -55℃~+150℃ |
| Type | 1 Piece P-Channel |
| Continuous Drain Current (Id) | 8A |
| Input Capacitance (Ciss@Vds) | 3307pF |
| Drain Source Voltage (Vdss) | 100V |
| Power Dissipation (Pd) | 5.4W |
| Gate Threshold Voltage (Vgs(th)@Id) | 3V@250uA |
| Reverse Transfer Capacitance (Crss@Vds) | 31pF@50V |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 80mΩ@4.5V |
| Total Gate Charge (Qg@Vgs) | 53.4nC@10V |