HYG016N10NS1B6
HYG016N10NS1B6
ПроизводительHUAYI
Партномер производителяHYG016N10NS1B6
ОписаниеTransistors/Thyristors HUAYI HYG016N10NS1B6
DatasheetDatasheet
Характеристики
| Параметр | Значение |
|---|---|
| Категория | МОП-транзисторы |
| Производитель | HUAYI |
| Вес | 2.301 |
| Operating Temperature | -55℃~+175℃ |
| Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 227pF |
| Pd- Power Dissipation | 375W |
| RDS(on) | 1.8mΩ@10V,100A |
| Drain to Source Voltage | 100V |
| Operating Junction Temperature Range | -55℃~+175℃ |
| Current - Continuous Drain(Id) | 322A |
| Gate Threshold Voltage (Vgs(th)) | 4V@250uA |
| Input Capacitance(Ciss) | 13.9nF |
| Output Capacitance(Coss) | 5.35nF |
| Gate Charge(Qg) | 220nC@10V |