HYG025N04NR1D
HYG025N04NR1D
ПроизводительHUAYI
Партномер производителяHYG025N04NR1D
ОписаниеTransistors/Thyristors HUAYI HYG025N04NR1D
DatasheetDatasheet
Характеристики
| Параметр | Значение |
|---|---|
| Категория | МОП-транзисторы |
| Производитель | HUAYI |
| Вес | 0.54 |
| Type | N-Channel |
| configuration | - |
| Reverse Transfer Capacitance (Crss@Vds) | 696pF |
| Pd- Power Dissipation | 107W |
| RDS(on) | 2.4mΩ@10V,20A |
| Drain to Source Voltage | 40V |
| Operating Junction Temperature Range | -55℃~+175℃ |
| Current - Continuous Drain(Id) | 157A |
| Gate Threshold Voltage (Vgs(th)) | 4V@250uA |
| Input Capacitance(Ciss) | 4.31nF |
| Output Capacitance(Coss) | 804pF |
| Gate Charge(Qg) | 107nC@10V |