APG095N01G
APG095N01G
ПроизводительALLPOWER(ShenZhen Quan Li Semiconductor)
Партномер производителяAPG095N01G
ОписаниеTransistors/Thyristors ALLPOWER APG095N01G
DatasheetDatasheet
Характеристики
| Параметр | Значение |
|---|---|
| Категория | МОП-транзисторы |
| Производитель | ALLPOWER(ShenZhen Quan Li Semiconductor) |
| Вес | 0.128 |
| Operating Temperature | -55℃~+150℃ |
| Type | 1 N-Channel |
| Continuous Drain Current (Id) | 60A |
| Input Capacitance (Ciss@Vds) | 2.122nF@50V |
| Drain Source Voltage (Vdss) | 100V |
| Power Dissipation (Pd) | 63W |
| Gate Threshold Voltage (Vgs(th)@Id) | 2.5V@250uA |
| Reverse Transfer Capacitance (Crss@Vds) | 25pF |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 13mΩ@4.5V,10A |
| Total Gate Charge (Qg@Vgs) | 41.8nC |
| Pd- Power Dissipation | 63W |
| RDS(on) | 9.5mΩ@10V |
| Drain to Source Voltage | 100V |
| Number | One N-channel |
| Operating Junction Temperature Range | -55℃~+150℃ |
| Current - Continuous Drain(Id) | 60A |
| Gate Threshold Voltage (Vgs(th)) | 2.5V@250uA |
| Input Capacitance(Ciss) | 2.122nF |
| Output Capacitance(Coss) | 618pF |
| Gate Charge(Qg) | 41.8nC@10V |