MTB340N11N6
MTB340N11N6
ПроизводительCYSTECH
Партномер производителяMTB340N11N6
ОписаниеTransistors/Thyristors CYSTECH MTB340N11N6
Характеристики
| Параметр | Значение |
|---|---|
| Категория | МОП-транзисторы |
| Производитель | CYSTECH |
| Вес | 0.04 |
| Operating Temperature | -55℃~+150℃ |
| Type | 1 N-Channel |
| Continuous Drain Current (Id) | 1.9A |
| Input Capacitance (Ciss@Vds) | 496pF@25V |
| Drain Source Voltage (Vdss) | 110V |
| Power Dissipation (Pd) | 2W |
| Gate Threshold Voltage (Vgs(th)@Id) | 2.5V@1.5A |
| Reverse Transfer Capacitance (Crss@Vds) | 16pF@25V |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 340mΩ@10V,1.5A |
| Total Gate Charge (Qg@Vgs) | 9.3nC@10V |