TSK82N30M
TSK82N30M
ПроизводительTruesemi
Партномер производителяTSK82N30M
ОписаниеTransistors/Thyristors Truesemi TSK82N30M
Характеристики
| Параметр | Значение |
|---|---|
| Категория | МОП-транзисторы |
| Производитель | Truesemi |
| Вес | 7.9 |
| Operating Temperature | -55℃~+150℃ |
| Type | 1 N-Channel |
| Continuous Drain Current (Id) | 82A |
| Input Capacitance (Ciss@Vds) | 6.904nF@25V |
| Drain Source Voltage (Vdss) | 300V |
| Power Dissipation (Pd) | 610W |
| Gate Threshold Voltage (Vgs(th)@Id) | 3V@250uA |
| Reverse Transfer Capacitance (Crss@Vds) | 67pF@25V |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 46mΩ@10V,40A |
| Total Gate Charge (Qg@Vgs) | 123nC |