LSGNE03R098WB
LSGNE03R098WB
ПроизводительLONTEN
Партномер производителяLSGNE03R098WB
ОписаниеTransistors/Thyristors LONTEN LSGNE03R098WB
Характеристики
| Параметр | Значение |
|---|---|
| Категория | МОП-транзисторы |
| Производитель | LONTEN |
| Вес | 0.102 |
| Operating Temperature | -55℃~+150℃ |
| Type | - |
| Continuous Drain Current (Id) | 30A |
| Input Capacitance (Ciss@Vds) | 563pF@15V |
| Drain Source Voltage (Vdss) | 30V |
| Power Dissipation (Pd) | 18W |
| Gate Threshold Voltage (Vgs(th)@Id) | 2.5V@250uA |
| Reverse Transfer Capacitance (Crss@Vds) | 28pF@15V |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 9.8mΩ@10V,30A |
| Total Gate Charge (Qg@Vgs) | 11nC@10V |