EMF50N03JS
EMF50N03JS
ПроизводительEMC
Партномер производителяEMF50N03JS
ОписаниеTransistors/Thyristors EMC EMF50N03JS
Характеристики
| Параметр | Значение |
|---|---|
| Категория | МОП-транзисторы |
| Производитель | EMC |
| Вес | 0.031 |
| Operating Temperature | -55℃~+150℃ |
| Type | 1 N-Channel |
| Continuous Drain Current (Id) | 3.5A |
| Input Capacitance (Ciss@Vds) | 362pF@10V |
| Drain Source Voltage (Vdss) | 30V |
| Power Dissipation (Pd) | 14W |
| Gate Threshold Voltage (Vgs(th)@Id) | 1.2V@250uA |
| Reverse Transfer Capacitance (Crss@Vds) | 39pF@10V |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 50mΩ@4.5V,3.5A |
| Total Gate Charge (Qg@Vgs) | 5.2nC@4.5V |