EMB09P03V
EMB09P03V
ПроизводительEMC
Партномер производителяEMB09P03V
ОписаниеTransistors/Thyristors EMC EMB09P03V
Характеристики
| Параметр | Значение |
|---|---|
| Категория | МОП-транзисторы |
| Производитель | EMC |
| Вес | 0.1 |
| Operating Temperature | -55℃~+150℃ |
| Type | 1 Piece P-Channel |
| Continuous Drain Current (Id) | 24A |
| Input Capacitance (Ciss@Vds) | 3.067nF |
| Drain Source Voltage (Vdss) | 30V |
| Power Dissipation (Pd) | 2.5W |
| Gate Threshold Voltage (Vgs(th)@Id) | 1V@250uA |
| Reverse Transfer Capacitance (Crss@Vds) | 398pF@15V |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 9.5mΩ@10V,13A |
| Total Gate Charge (Qg@Vgs) | 52nC@10V |