EMB12N04V
EMB12N04V
ПроизводительEMC
Партномер производителяEMB12N04V
ОписаниеTransistors/Thyristors EMC EMB12N04V
Характеристики
| Параметр | Значение |
|---|---|
| Категория | МОП-транзисторы |
| Производитель | EMC |
| Вес | 0.11 |
| Operating Temperature | -55℃~+150℃ |
| Type | 1 N-Channel |
| Continuous Drain Current (Id) | 18A |
| Input Capacitance (Ciss@Vds) | 1090pF@20V |
| Drain Source Voltage (Vdss) | 40V |
| Power Dissipation (Pd) | 8.3W |
| Gate Threshold Voltage (Vgs(th)@Id) | 3V@250uA |
| Reverse Transfer Capacitance (Crss@Vds) | 106pF@20V |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 12.8mΩ@10V,12A |
| Total Gate Charge (Qg@Vgs) | 24nC@10V |