HSX044N25
HSX044N25
ПроизводительHUASHUO
Партномер производителяHSX044N25
ОписаниеTransistors/Thyristors HUASHUO HSX044N25
Характеристики
| Параметр | Значение |
|---|---|
| Категория | МОП-транзисторы |
| Производитель | HUASHUO |
| Вес | 8.087 |
| Operating Temperature | -55℃~+175℃ |
| Type | 1 N-Channel |
| Continuous Drain Current (Id) | 55A |
| Input Capacitance (Ciss@Vds) | 8547pF@50V |
| Drain Source Voltage (Vdss) | 250V |
| Power Dissipation (Pd) | 350W |
| Gate Threshold Voltage (Vgs(th)@Id) | 3V@250uA |
| Reverse Transfer Capacitance (Crss@Vds) | 85pF@50V |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 44mΩ@10V,5A |
| Total Gate Charge (Qg@Vgs) | 155nC@10V |