HSX80N20
HSX80N20
ПроизводительHUASHUO
Партномер производителяHSX80N20
ОписаниеTransistors/Thyristors HUASHUO HSX80N20
Характеристики
| Параметр | Значение |
|---|---|
| Категория | МОП-транзисторы |
| Производитель | HUASHUO |
| Вес | 7.9 |
| Operating Temperature | -55℃~+150℃@(Tj) |
| Type | 1 N-Channel |
| Continuous Drain Current (Id) | 80A |
| Input Capacitance (Ciss@Vds) | 7.49nF@50V |
| Drain Source Voltage (Vdss) | 200V |
| Power Dissipation (Pd) | 370W |
| Gate Threshold Voltage (Vgs(th)@Id) | 4V@250uA |
| Reverse Transfer Capacitance (Crss@Vds) | 99pF@50V |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 20mΩ@10V,30A |
| Total Gate Charge (Qg@Vgs) | 115nC@10V |