HSY0076A
HSY0076A
ПроизводительHUASHUO
Партномер производителяHSY0076A
ОписаниеTransistors/Thyristors HUASHUO HSY0076A
DatasheetDatasheet
Характеристики
| Параметр | Значение |
|---|---|
| Категория | МОП-транзисторы |
| Производитель | HUASHUO |
| Вес | 0.88 |
| Operating Temperature | -55℃~+175℃ |
| Type | 1 N-Channel |
| Continuous Drain Current (Id) | 320A |
| Input Capacitance (Ciss@Vds) | 13.37nF@50V |
| Drain Source Voltage (Vdss) | 100V |
| Power Dissipation (Pd) | 333W |
| Gate Threshold Voltage (Vgs(th)@Id) | 2V@250uA |
| Reverse Transfer Capacitance (Crss@Vds) | 388pF@50V |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 1.9mΩ@10V,90A |
| Total Gate Charge (Qg@Vgs) | 215nC@10V |
| Pd- Power Dissipation | 333W |
| RDS(on) | 1.9mΩ@10V,90A |
| Drain to Source Voltage | 100V |
| Number | One N-channel |
| Operating Junction Temperature Range | -55℃~+175℃ |
| Current - Continuous Drain(Id) | 320A |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Input Capacitance(Ciss) | 13.37nF@50V |
| Gate Charge(Qg) | 215nC@10V |