SI2305
SI2305
ПроизводительHUASHUO
Партномер производителяSI2305
ОписаниеTransistors/Thyristors HUASHUO SI2305
Характеристики
| Параметр | Значение |
|---|---|
| Категория | МОП-транзисторы |
| Производитель | HUASHUO |
| Вес | 1 |
| Operating Temperature | -55℃~+150℃@(Tj) |
| Type | 1 Piece P-Channel |
| Continuous Drain Current (Id) | 4.9A |
| Input Capacitance (Ciss@Vds) | 857pF@15V |
| Drain Source Voltage (Vdss) | 20V |
| Power Dissipation (Pd) | 1.31W |
| Gate Threshold Voltage (Vgs(th)@Id) | 1V@250uA |
| Reverse Transfer Capacitance (Crss@Vds) | 108pF@15V |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 45mΩ@4.5V,4.9A |
| Total Gate Charge (Qg@Vgs) | 10.2nC@4.5V |