SFG10S10GF
SFG10S10GF
ПроизводительORIENTAL SEMI
Партномер производителяSFG10S10GF
ОписаниеTransistors/Thyristors ORIENTAL SEMI SFG10S10GF
Характеристики
| Параметр | Значение |
|---|---|
| Категория | МОП-транзисторы |
| Производитель | ORIENTAL SEMI |
| Вес | 1 |
| Operating Temperature | -55℃~+150℃ |
| Type | 1 N-Channel |
| Continuous Drain Current (Id) | 60A |
| Input Capacitance (Ciss@Vds) | 1998pF |
| Drain Source Voltage (Vdss) | 100V |
| Power Dissipation (Pd) | 107W |
| Gate Threshold Voltage (Vgs(th)@Id) | 2.5V@250uA |
| Reverse Transfer Capacitance (Crss@Vds) | 7.1pF |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 10mΩ@10V,30A |
| Total Gate Charge (Qg@Vgs) | 28.9nC@10V |