ASM6115
ASM6115
ПроизводительSine Microelectronics
Партномер производителяASM6115
ОписаниеTransistors/Thyristors Sine Microelectronics ASM6115
Характеристики
| Параметр | Значение |
|---|---|
| Категория | МОП-транзисторы |
| Производитель | Sine Microelectronics |
| Вес | 0.4 |
| Operating Temperature | -55℃~+150℃@(Tj) |
| Type | 1 Piece P-Channel |
| Continuous Drain Current (Id) | 35A |
| Input Capacitance (Ciss@Vds) | 3.635nF@15V |
| Drain Source Voltage (Vdss) | 60V |
| Power Dissipation (Pd) | 52.1W |
| Gate Threshold Voltage (Vgs(th)@Id) | 2.5V@250uA |
| Reverse Transfer Capacitance (Crss@Vds) | 141pF@15V |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 25mΩ@10V,18A |
| Total Gate Charge (Qg@Vgs) | 25nC@4.5V |