GL200N06A8
GL200N06A8
ПроизводительGL
Партномер производителяGL200N06A8
ОписаниеTransistors/Thyristors GL GL200N06A8
Характеристики
| Параметр | Значение |
|---|---|
| Категория | МОП-транзисторы |
| Производитель | GL |
| Вес | 2 |
| Operating Temperature | -55℃~+175℃ |
| Type | 1 N-Channel |
| Continuous Drain Current (Id) | 208A |
| Input Capacitance (Ciss@Vds) | 9.1nF@30V |
| Drain Source Voltage (Vdss) | 60V |
| Power Dissipation (Pd) | 333W |
| Gate Threshold Voltage (Vgs(th)@Id) | 3V@250uA |
| Reverse Transfer Capacitance (Crss@Vds) | 330pF@30V |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 2.4mΩ@10V,80A |
| Total Gate Charge (Qg@Vgs) | 120nC@10V |