GL20N10B4S
GL20N10B4S
ПроизводительGL
Партномер производителяGL20N10B4S
ОписаниеTransistors/Thyristors GL GL20N10B4S
Характеристики
| Параметр | Значение |
|---|---|
| Категория | МОП-транзисторы |
| Производитель | GL |
| Вес | 0.44 |
| Operating Temperature | -55℃~+175℃ |
| Type | 1 N-Channel |
| Continuous Drain Current (Id) | 20A |
| Input Capacitance (Ciss@Vds) | 410pF@50V |
| Drain Source Voltage (Vdss) | 100V |
| Power Dissipation (Pd) | 45W |
| Gate Threshold Voltage (Vgs(th)@Id) | 3V@250uA |
| Reverse Transfer Capacitance (Crss@Vds) | 3pF@50V |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 75mΩ@10V,10A |
| Total Gate Charge (Qg@Vgs) | 7nC@10V |