GL50N03A4
GL50N03A4
ПроизводительGL
Партномер производителяGL50N03A4
ОписаниеTransistors/Thyristors GL GL50N03A4
Характеристики
| Параметр | Значение |
|---|---|
| Категория | МОП-транзисторы |
| Производитель | GL |
| Вес | 0.439 |
| Operating Temperature | -55℃~+175℃ |
| Type | 1 N-Channel |
| Continuous Drain Current (Id) | 50A |
| Input Capacitance (Ciss@Vds) | 1.8nF@15V |
| Drain Source Voltage (Vdss) | 30V |
| Power Dissipation (Pd) | 60W |
| Gate Threshold Voltage (Vgs(th)@Id) | 1V@250uA |
| Reverse Transfer Capacitance (Crss@Vds) | 180pF@15V |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 8mΩ@10V,25A |
| Total Gate Charge (Qg@Vgs) | 23nC@10V |