GL80N03A4
GL80N03A4
ПроизводительGL
Партномер производителяGL80N03A4
ОписаниеTransistors/Thyristors GL GL80N03A4
Характеристики
| Параметр | Значение |
|---|---|
| Категория | МОП-транзисторы |
| Производитель | GL |
| Вес | 0.435 |
| Operating Temperature | -55℃~+175℃ |
| Type | 1 N-Channel |
| Continuous Drain Current (Id) | 80A |
| Input Capacitance (Ciss@Vds) | 2.33nF |
| Drain Source Voltage (Vdss) | 30V |
| Power Dissipation (Pd) | 83W |
| Gate Threshold Voltage (Vgs(th)@Id) | 3V@250uA |
| Reverse Transfer Capacitance (Crss@Vds) | 230pF@15V |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 5mΩ@10V,30A |
| Total Gate Charge (Qg@Vgs) | 51nC@10V |