GL80N06FA9
GL80N06FA9
ПроизводительGL
Партномер производителяGL80N06FA9
ОписаниеTransistors/Thyristors GL GL80N06FA9
Характеристики
| Параметр | Значение |
|---|---|
| Категория | МОП-транзисторы |
| Производитель | GL |
| Вес | 1.91 |
| Operating Temperature | -55℃~+175℃ |
| Continuous Drain Current (Id) | 80A |
| Input Capacitance (Ciss@Vds) | 4nF@30V |
| Drain Source Voltage (Vdss) | null |
| Power Dissipation (Pd) | 60W |
| Gate Threshold Voltage (Vgs(th)@Id) | 2.5V@250uA |
| Reverse Transfer Capacitance (Crss@Vds) | 210pF@30V |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 6.5mΩ@10V,40A |
| Total Gate Charge (Qg@Vgs) | 90nC@10V |