AP85N04NF
AP85N04NF
ПроизводительA Power microelectronics
Партномер производителяAP85N04NF
ОписаниеTransistors/Thyristors A Power microelectronics AP85N04NF
Характеристики
| Параметр | Значение |
|---|---|
| Категория | МОП-транзисторы |
| Производитель | A Power microelectronics |
| Вес | 0.25 |
| Operating Temperature | -55℃~+150℃ |
| Type | 1 N-Channel |
| Continuous Drain Current (Id) | 85A |
| Input Capacitance (Ciss@Vds) | 2.354nF@15V |
| Drain Source Voltage (Vdss) | 40V |
| Power Dissipation (Pd) | 52.1W |
| Gate Threshold Voltage (Vgs(th)@Id) | 2.5V@250uA |
| Reverse Transfer Capacitance (Crss@Vds) | 175pF@15V |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 6.5mΩ@10V,5A |
| Total Gate Charge (Qg@Vgs) | 20nC@4.5V |