AP8N06SI
AP8N06SI
ПроизводительA Power microelectronics
Партномер производителяAP8N06SI
ОписаниеTransistors/Thyristors A Power microelectronics AP8N06SI
Характеристики
| Параметр | Значение |
|---|---|
| Категория | МОП-транзисторы |
| Производитель | A Power microelectronics |
| Вес | 0.21 |
| Operating Temperature | -55℃~+150℃ |
| Type | 1 N-Channel |
| Continuous Drain Current (Id) | 8.5A |
| Input Capacitance (Ciss@Vds) | 1.148nF@25V |
| Drain Source Voltage (Vdss) | 60V |
| Power Dissipation (Pd) | 1.2W |
| Gate Threshold Voltage (Vgs(th)@Id) | 2.5V@250uA |
| Reverse Transfer Capacitance (Crss@Vds) | 49.4pF@25V |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 35mΩ@10V,10A |
| Total Gate Charge (Qg@Vgs) | 20.3nC |