AP8P10S
AP8P10S
ПроизводительA Power microelectronics
Партномер производителяAP8P10S
ОписаниеTransistors/Thyristors A Power microelectronics AP8P10S
Характеристики
| Параметр | Значение |
|---|---|
| Категория | МОП-транзисторы |
| Производитель | A Power microelectronics |
| Вес | 0.24 |
| Operating Temperature | -55℃~+150℃ |
| Type | 1 Piece P-Channel |
| Continuous Drain Current (Id) | 8A |
| Input Capacitance (Ciss@Vds) | 1.051nF@20V |
| Drain Source Voltage (Vdss) | 100V |
| Power Dissipation (Pd) | 3.1W |
| Gate Threshold Voltage (Vgs(th)@Id) | 1.2V@250uA |
| Reverse Transfer Capacitance (Crss@Vds) | 25pF@20V |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 110mΩ@10V,6A |
| Total Gate Charge (Qg@Vgs) | 20.1nC@10V |