AP9N20D
AP9N20D
ПроизводительA Power microelectronics
Партномер производителяAP9N20D
ОписаниеTransistors/Thyristors A Power microelectronics AP9N20D
Характеристики
| Параметр | Значение |
|---|---|
| Категория | МОП-транзисторы |
| Производитель | A Power microelectronics |
| Вес | 0.49 |
| Operating Temperature | -55℃~+150℃ |
| Type | 1 N-Channel |
| Continuous Drain Current (Id) | 6A |
| Input Capacitance (Ciss@Vds) | 684pF |
| Drain Source Voltage (Vdss) | 200V |
| Power Dissipation (Pd) | 74W |
| Gate Threshold Voltage (Vgs(th)@Id) | 1.6V@250uA |
| Reverse Transfer Capacitance (Crss@Vds) | 37pF@25V |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 230mΩ@10V,4.5A |
| Total Gate Charge (Qg@Vgs) | 23nC@10V |