APG110N10NF
APG110N10NF
ПроизводительA Power microelectronics
Партномер производителяAPG110N10NF
ОписаниеTransistors/Thyristors A Power microelectronics APG110N10NF
Характеристики
| Параметр | Значение |
|---|---|
| Категория | МОП-транзисторы |
| Производитель | A Power microelectronics |
| Вес | 0.26 |
| Operating Temperature | -55℃~+150℃ |
| Type | 1 N-Channel |
| Continuous Drain Current (Id) | 110A |
| Input Capacitance (Ciss@Vds) | 4.4nF@50V |
| Drain Source Voltage (Vdss) | 100V |
| Power Dissipation (Pd) | 113.6W |
| Gate Threshold Voltage (Vgs(th)@Id) | 2.5V@250uA |
| Reverse Transfer Capacitance (Crss@Vds) | 20pF@50V |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 6mΩ@10V,20A |
| Total Gate Charge (Qg@Vgs) | 75nC@10V |