APG40N10D
APG40N10D
ПроизводительA Power microelectronics
Партномер производителяAPG40N10D
ОписаниеTransistors/Thyristors A Power microelectronics APG40N10D
Характеристики
| Параметр | Значение |
|---|---|
| Категория | МОП-транзисторы |
| Производитель | A Power microelectronics |
| Вес | 0.49 |
| Operating Temperature | -55℃~+150℃ |
| Continuous Drain Current (Id) | 40A |
| Input Capacitance (Ciss@Vds) | 1003.9pF |
| Drain Source Voltage (Vdss) | 100V |
| Power Dissipation (Pd) | 71W |
| Gate Threshold Voltage (Vgs(th)@Id) | 2.5V@250uA |
| Reverse Transfer Capacitance (Crss@Vds) | 9.8pF@50V |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 20mΩ@10V,10A |
| Total Gate Charge (Qg@Vgs) | 16.2nC@10V |