APG40N10NF
APG40N10NF
ПроизводительA Power microelectronics
Партномер производителяAPG40N10NF
ОписаниеTransistors/Thyristors A Power microelectronics APG40N10NF
Характеристики
| Параметр | Значение |
|---|---|
| Категория | МОП-транзисторы |
| Производитель | A Power microelectronics |
| Вес | 0.25 |
| Operating Temperature | -55℃~+150℃ |
| Continuous Drain Current (Id) | 40A |
| Input Capacitance (Ciss@Vds) | 1190.6pF |
| Drain Source Voltage (Vdss) | 100V |
| Power Dissipation (Pd) | 72W |
| Gate Threshold Voltage (Vgs(th)@Id) | 2.5V@250uA |
| Reverse Transfer Capacitance (Crss@Vds) | 4.1pF |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 20mΩ@10V,8A |
| Total Gate Charge (Qg@Vgs) | 19.8nC@10V |