APG60N10D
APG60N10D
ПроизводительA Power microelectronics
Партномер производителяAPG60N10D
ОписаниеTransistors/Thyristors A Power microelectronics APG60N10D
Характеристики
| Параметр | Значение |
|---|---|
| Категория | МОП-транзисторы |
| Производитель | A Power microelectronics |
| Вес | 0.5 |
| Operating Temperature | -55℃~+150℃ |
| Type | 1 N-Channel |
| Continuous Drain Current (Id) | 60A |
| Input Capacitance (Ciss@Vds) | 2.604nF@50V |
| Drain Source Voltage (Vdss) | 100V |
| Power Dissipation (Pd) | 125W |
| Gate Threshold Voltage (Vgs(th)@Id) | 1V@250uA |
| Reverse Transfer Capacitance (Crss@Vds) | 6.5pF@50V |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 10mΩ@4.5V,10A |
| Total Gate Charge (Qg@Vgs) | 49.9nC@10V |