APJ14N65F
APJ14N65F
ПроизводительA Power microelectronics
Партномер производителяAPJ14N65F
ОписаниеTransistors/Thyristors A Power microelectronics APJ14N65F
Характеристики
| Параметр | Значение |
|---|---|
| Категория | МОП-транзисторы |
| Производитель | A Power microelectronics |
| Вес | 2.27 |
| Operating Temperature | -55℃~+150℃ |
| Continuous Drain Current (Id) | 8A |
| Input Capacitance (Ciss@Vds) | 438pF@100V |
| Drain Source Voltage (Vdss) | 650V |
| Power Dissipation (Pd) | 25.5W |
| Gate Threshold Voltage (Vgs(th)@Id) | 2.5V@250uA |
| Reverse Transfer Capacitance (Crss@Vds) | 1.32pF@100V |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 560mΩ@10V,3.2A |
| Total Gate Charge (Qg@Vgs) | 11nC@10V |