AP190N15P
AP190N15P
ПроизводительA Power microelectronics
Партномер производителяAP190N15P
ОписаниеTransistors/Thyristors A Power microelectronics AP190N15P
Характеристики
| Параметр | Значение |
|---|---|
| Категория | МОП-транзисторы |
| Производитель | A Power microelectronics |
| Вес | 5.2 |
| Operating Temperature | -55℃~+150℃ |
| Continuous Drain Current (Id) | 190A |
| Input Capacitance (Ciss@Vds) | 5.24nF@50V |
| Drain Source Voltage (Vdss) | 150V |
| Power Dissipation (Pd) | 210W |
| Gate Threshold Voltage (Vgs(th)@Id) | 4V@250uA |
| Reverse Transfer Capacitance (Crss@Vds) | 10pF@50V |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 6.6mΩ@10V,20A |
| Total Gate Charge (Qg@Vgs) | 18nC@10V |