AP60N02BD
AP60N02BD
ПроизводительA Power microelectronics
Партномер производителяAP60N02BD
ОписаниеTransistors/Thyristors A Power microelectronics AP60N02BD
Характеристики
| Параметр | Значение |
|---|---|
| Категория | МОП-транзисторы |
| Производитель | A Power microelectronics |
| Вес | 0.5 |
| Operating Temperature | -55℃~+175℃ |
| Type | 1 N-Channel |
| Continuous Drain Current (Id) | 60A |
| Input Capacitance (Ciss@Vds) | 1.832nF@10V |
| Drain Source Voltage (Vdss) | 20V |
| Power Dissipation (Pd) | 37W |
| Gate Threshold Voltage (Vgs(th)@Id) | 1.2V@250uA |
| Reverse Transfer Capacitance (Crss@Vds) | 271pF@10V |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 6.5mΩ@4.5V,30A |
| Total Gate Charge (Qg@Vgs) | 23nC@4.5V |