FTZ30P35G
FTZ30P35G
ПроизводительARK micro
Партномер производителяFTZ30P35G
ОписаниеTransistors/Thyristors ARK micro FTZ30P35G
DatasheetDatasheet
Характеристики
| Параметр | Значение |
|---|---|
| Категория | МОП-транзисторы |
| Производитель | ARK micro |
| Вес | 0.094 |
| Operating Temperature | -55℃~+150℃ |
| Type | P-Channel |
| Continuous Drain Current (Id) | 200mA |
| Input Capacitance (Ciss@Vds) | 43.39pF |
| Drain Source Voltage (Vdss) | 350V |
| Power Dissipation (Pd) | 500mW |
| Gate Threshold Voltage (Vgs(th)@Id) | 1V@250uA |
| Reverse Transfer Capacitance (Crss@Vds) | 0.84pF |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 30Ω@10V,200mA |
| Pd- Power Dissipation | 500mW |
| RDS(on) | 30Ω@10V |
| Drain to Source Voltage | 350V |
| Number | 1 P-Channel |
| Operating Junction Temperature Range | -55℃~+150℃ |
| Current - Continuous Drain(Id) | 200mA |
| Gate Threshold Voltage (Vgs(th)) | 3V@250uA |
| Input Capacitance(Ciss) | 43.39pF |