P1006BD
P1006BD
ПроизводительU-NIKC
Партномер производителяP1006BD
ОписаниеTransistors/Thyristors U-NIKC P1006BD
DatasheetDatasheet
Характеристики
| Параметр | Значение |
|---|---|
| Категория | МОП-транзисторы |
| Производитель | U-NIKC |
| Вес | 0.5 |
| Operating Temperature | -55℃~+150℃ |
| Type | N-Channel |
| Continuous Drain Current (Id) | 66A |
| Input Capacitance (Ciss@Vds) | 1.92nF@25V |
| Drain Source Voltage (Vdss) | 60V |
| Power Dissipation (Pd) | 96W |
| Gate Threshold Voltage (Vgs(th)@Id) | 1.3V@250uA |
| Reverse Transfer Capacitance (Crss@Vds) | 140pF |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 10mΩ@10V,20A |
| Total Gate Charge (Qg@Vgs) | 42nC@10V |
| Pd- Power Dissipation | 38W |
| RDS(on) | 10mΩ@10V |
| Drain to Source Voltage | 60V |
| Number | One N-channel |
| Operating Junction Temperature Range | -55℃~+150℃ |
| Current - Continuous Drain(Id) | 66A |
| Gate Threshold Voltage (Vgs(th)) | 2.3V@250uA |
| Input Capacitance(Ciss) | 1.92nF |
| Output Capacitance(Coss) | 215pF |
| Gate Charge(Qg) | 42nC@10V |