AGML315ME
AGML315ME
ПроизводительAGM-Semi
Партномер производителяAGML315ME
ОписаниеTransistors/Thyristors AGM-Semi AGML315ME
Характеристики
| Параметр | Значение |
|---|---|
| Категория | МОП-транзисторы |
| Производитель | AGM-Semi |
| Вес | 0.044 |
| Operating Temperature | -55℃~+150℃@(Tj) |
| Type | 1 N-Channel + 1 P-Channel |
| Continuous Drain Current (Id) | 5.6A;4.2A |
| Input Capacitance (Ciss@Vds) | 630pF@15V;750pF@-15V |
| Drain Source Voltage (Vdss) | 30V |
| Power Dissipation (Pd) | 1.28W |
| Gate Threshold Voltage (Vgs(th)@Id) | 900mV@250uA |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 25mΩ@10V,4A;43mΩ@-10V,-4A |
| Total Gate Charge (Qg@Vgs) | 17nC@10V;8nC@-10V |